PMGD8000LN,115 NXP Semiconductors, PMGD8000LN,115 Datasheet - Page 5

• Manufacturer Part Number: PMGD8000LN,115
• Description: MOSFET N-CH TRENCH DL 30V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD8000LN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 125mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 350pC @ 4.5V
• Input Capacitance (ciss) @ Vds: 18.5pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.125 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2370-2; 934057621115; PMGD8000LN T/R

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 10939
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
V
V
V
D
D
S
Rev. 01 — 27 February 2003
DS
GS
GS
GS
DD
GS
DD
T
T
T
T
T
T
= 0.1 A; V
= 10 A; V
= 100 A; V
j
j
j
j
j
j
= 30 V; V
= 10 V; V
= 4 V; I
= 2.5 V; I
= 10 V; V
= 0 V; V
= 3 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
D
GS
DS
L
GS
= 10 mA;
D
GS
GS
= 100 ; V
DS
DS
= 1 mA;
= 5 V; f = 1 MHz;
= 0 V;
= 0 V
= 0 V
= 4.5 V; I
= V
= 0 V
GS
Figure 12
;
Figure 7
Figure 7
Figure 9
GS
D
= 0.1 A;
= 4.5 V; R
and
and
Figure 11
Dual TrenchMOS™ logic level FET
Figure 13
8
8
G
= 6
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
PMGD8000LN
Min
30
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
0.01
-
10
1.8
2.9
2.9
4.6
350
60
120
18.5
12.5
9
10
7
15
7
0.77
Max
-
1.5
1.0
10
100
8
12.8
13
21
-
-
-
-
-
-
-
-
-
-
1.35
5 of 12
Unit
V
V
nA
pC
pC
pC
pF
pF
pF
ns
ns
ns
ns
V
A
A