PMGD8000LN,115 NXP Semiconductors, PMGD8000LN,115 Datasheet - Page 11

• Manufacturer Part Number: PMGD8000LN,115
• Description: MOSFET N-CH TRENCH DL 30V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD8000LN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 125mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 350pC @ 4.5V
• Input Capacitance (ciss) @ Vds: 18.5pF @ 5V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.125 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2370-2; 934057621115; PMGD8000LN T/R

Philips Semiconductors
Philips Semiconductors
11. Data sheet status
[1]
[2]
[3]
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
TrenchMOS —
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [e-mail].
9397 750 10939
9397 750 10939
Product data
Product data
Level Data sheet status
I
II
III
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
Objective data
Preliminary data
Product data
is a trademark of Koninklijke Philips Electronics N.V.
[1]
Product status
Development
Qualification
Production
[2][3]
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Rev. 01 — 27 February 2003
Rev. 01 — 27 February 2003
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Notification
Dual TrenchMOS™ logic level FET
Dual TrenchMOS™ logic level FET
(CPCN).
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
PMGD8000LN
PMGD8000LN
Philips
Semiconductors
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