BSD235N L6327 Infineon Technologies, BSD235N L6327 Datasheet - Page 2

• Manufacturer Part Number: BSD235N L6327
• Description: MOSFET N-CH DUAL 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235N L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 63pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235N L6327; BSD235N L6327INTR; SP000442458

Rev 2.3
2)
of the PCB
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Performed on 40 mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=0.76 A
DS
=V
=20 V, V
=20 V, V
=0 V, I
=12 V, V
=2.5 V, I
=4.5 V, I
|>2|I
GS
, I
D
|R
D
D
=250 µA
=1.6 µA
D
D
GS
GS
DS
DS(on)max
=0.29 A
=0.95 A
=0 V,
=0 V,
=0 V
(2)
,
min.
0.7
20
-
-
-
-
-
-
Values
0.95
typ.
415
266
2
-
-
-
-
-
max.
250
100
100
600
350
1.2
1
-
-
BSD235N
Unit
K/W
V
μA
nA
mΩ
S
2011-07-14