BSD235N L6327 Infineon Technologies, BSD235N L6327 Datasheet - Page 3

• Manufacturer Part Number: BSD235N L6327
• Description: MOSFET N-CH DUAL 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235N L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 63pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235N L6327; BSD235N L6327INTR; SP000442458

Rev 2.3
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
DD
GS
GS
R
=0.95 A, R
=25 °C
F
=25 °C
=10 V, I
/dt =100 A/µs
=0 V, V
=10 V, V
=10 V, I
=0 to 4.5 V
=0 V, I
F
F
DS
=0.95 A,
=0.95 A,
D
GS
G
=0.95 A,
=10 V,
=6 Ω
=4.5 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.11
0.07
0.32
0.97
typ.
3.2
3.8
3.6
4.5
1.2
2.4
0.9
5.2
49
23
-
-
max.
0.5
3.8
1.2
63
32
-
-
-
-
-
-
-
-
-
-
-
BSD235N
Unit
pF
ns
nC
V
A
V
ns
nC
2011-07-14