BSD235N L6327 Infineon Technologies, BSD235N L6327 Datasheet - Page 5

• Manufacturer Part Number: BSD235N L6327
• Description: MOSFET N-CH DUAL 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235N L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 63pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235N L6327; BSD235N L6327INTR; SP000442458

Rev 2.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
4
3
2
1
0
DS
GS
0.25
0
0.5
); T
); |V
0
0
j
=25 °C
GS
DS
|>2|I
D
4.5 V
|R
1
DS(on)max
1
V
3.5 V
DS
V
150 °C
GS
[V]
[V]
2
2 V
2
2.5 V
2.3 V
3 V
25 °C
page 5
3
3
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
600
500
400
300
200
100
4
2
0
D
=f(I
); T
0
0
0
D
2.2 V
j
); T
=25 °C
GS
j
=25 °C
2.5 V
1
3.5 V
2
I
D
I
D
[A]
2
4.5 V
6 V
[A]
3 V
4
3
BSD235N
2011-07-14
6
4