BSD235N L6327 Infineon Technologies, BSD235N L6327 Datasheet - Page 4

• Manufacturer Part Number: BSD235N L6327
• Description: MOSFET N-CH DUAL 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235N L6327

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.32nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 63pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235N L6327; BSD235N L6327INTR; SP000442458

Rev 2.3
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
0.375
0.125
10
10
0.25
DS
-1
-2
-3
0.5
1
0
A
10
0
); T
)
-2
0
10 µs
A
p
=25 °C; D =0
10
-1
40
V
T
DS
10
A
[°C]
0
[V]
DC
80
10 ms
1 ms
10
1
100 µs
120
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
10
10
10
10
A
0.75
0.25
3
2
1
0
); V
0.5
10
p
1
0
)
-5
0.01
0.05
single pulse
0
GS
0.1
0.5
0.2
≥4.5 V
10
p
-4
/T
10
40
-3
10
-2
t
T
p
A
[s]
80
[°C]
10
-1
10
120
0
BSD235N
10
1
2011-07-14
160
10
2