FDS8858CZ Fairchild Semiconductor, FDS8858CZ Datasheet
FDS8858CZ
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FDS8858CZ Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS8858CZ FDS8858CZ ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev.B1 ® MOSFET General Description These dual N and P-Channel enhancement MOSFETs are produced using Fairchild Semiconductor’s = 8.6A D advanced PowerTrench process that has been especially = 7 ...
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... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev. 25°C unless otherwise noted J Test Conditions I = 250µ -250µ 250µA, referenced to 25°C ...
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... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev. 25°C unless otherwise noted J Test Conditions 8.6A (Note 2) ...
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... Junction Temperature 20 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev. 25°C unless otherwise noted J µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 100 125 150 ( - 0.001 3.0 PULSE DURATION = ...
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... TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability C/W θ AMBIENT TEMPERATURE ( , T A Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev. 25°C unless otherwise noted J 3000 1000 V = 15V 20V 100 Figure 10. Gate Leakage Current vs Gate 10V ...
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... DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 135 θ JA 0.0003 - ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev. 25°C unless otherwise noted PULSE WIDTH ( RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve 6 FOR TEMPERATURES o ABOVE 25 C DERATE PEAK ...
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... Figure 17. Normalized On- Resistance vs Junction Temperature 20 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX - 125 GATE TO SOURCE VOLTAGE (V) GS Figure 19. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev. 25°C unless otherwise noted J µ -3. - Figure 16. Normalized on-Resistance vs Drain 50 75 100 125 150 0. =- 0.001 C 0.0001 ...
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... 0.01 0 TIME IN AVALANCHE(ms) AV Figure 23. Unclamped Inductive Switching Capability -4. C/W θ AMBIENT TEMPERATURE ( T A Figure 25 . Maximum Continuous Drain Current vs Ambient Temperature ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev. unless otherwise noted J 4000 V = -10V DD 1000 V = -20V DD 100 Figure 24. Gate Leakage Current vs Gate -10V ...
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... Figure 27. 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 R θ JA 0.0003 - ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev. unless otherwise noted PULSE WIDTH (s) Single Pulse Maximum Power Dissipation o = 135 C RECTANGULAR PULSE DURATION (s) Figure 28. Transient Thermal Response Curve 9 ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDS8858CZ Rev.B1 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...