FDS8858CZ Fairchild Semiconductor, FDS8858CZ Datasheet - Page 9

• Manufacturer Part Number: FDS8858CZ
• Description: MOSFET DUAL N/P-CHAN 30V SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8858CZ

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 8.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.6A, 7.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1205pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.017 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 27 S / 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 8.6 A @ N Channel or 7.3 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8858CZTR

©2009 Fairchild Semiconductor Corporation
FDS8858CZ Rev.B1
Typical Characteristics(Q2 P-Channel)
0.0003
0.01
300
100
0.1
0.5
10
10
2
1
1
10
-3
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
V
SINGLE PULSE
R
GS
θ
JA
= 10V
= 135
o
10
C/W
10
SINGLE PULSE
R
-2
-2
θ
JA
Figure 27.
= 135
Figure 28. Transient Thermal Response Curve
o
C/W
Single Pulse Maximum Power Dissipation
10
10
-1
-1
t, RECTANGULAR PULSE DURATION (s)
t, PULSE WIDTH (s)
T
J
= 25
9
10
10
0
o
0
C unless otherwise noted
10
10
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
DM
I = I
x Z
10
25
10
P
θJC
2
DM
2
1
/t
o
x R
2
C DERATE PEAK
150 T
------------------------
θJA
125
–
t
1
+ T
t
A
T
2
A
A
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= 25
o
C
10
10
3
3