FDS8858CZ Fairchild Semiconductor, FDS8858CZ Datasheet - Page 2

• Manufacturer Part Number: FDS8858CZ
• Description: MOSFET DUAL N/P-CHAN 30V SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8858CZ

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 8.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.6A, 7.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1205pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.017 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 27 S / 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 8.6 A @ N Channel or 7.3 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8858CZTR

©2009 Fairchild Semiconductor Corporation
FDS8858CZ Rev.B1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
∆T
∆T
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25°C unless otherwise noted
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1
V
Q2
V
f = 1MHz
I
I
I
I
V
V
V
V
D
D
D
D
D
D
DD
GS
DD
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
GS
GS
= 250µA, referenced to 25°C
= -250µA, referenced to 25°C
= 250µA, V
= -250µA, V
= 250µA, referenced to 25°C
= -250µA, referenced to 25°C
= 15V, V
= -15V, V
= -10V, I
= 5V, I
= -5V, I
= 15V, I
= 10V, R
= -15V, I
= -10V, R
= 10V, V
= -10V, V
= V
= V
= 10V, I
= 4.5V, I
= 10V, I
= -10V, I
= -4.5V, I
= 24V, V
= -24V, V
= ±20V, V
= ±25V, V
DS
DS
Test Conditions
, I
, I
D
2
D
D
D
D
D
GS
DD
D
D
D
GEN
D
= 8.6A
D
GS
DD
GEN
= 8.6A,
D
= -7.3A
GS
= 8.6A
= 8.6A, T
= -7.3A,
= 250µA
= -250µA
= -7.3A, T
GS
GS
DS
DS
GS
= 7.3A
= -7.3A
= -5.6A
= 0V, f = 1MHZ
= 15V, I
= 0V, f = 1MHZ
= -15V, I
= 0V
= 6Ω
= 0V
= 0V
= 0V
= 0V
= 0V
= 6Ω
D
J
J
D
= 125°C
= 8.6A
= 125°C
= -7.3A
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Min
-30
30
-1
1
12.4
15.2
17.7
17.1
26.5
24.0
1675
Typ
-2.1
-5.4
-22
1.6
6.0
905
180
290
110
260
22
27
21
1.3
4.4
2.7
6.1
3.4
8.5
10
19
33
16
17
33
7
9
3
3
Max
1205
2230
17.0
20.0
24.3
20.5
34.5
28.8
±10
±10
240
390
165
390
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-1
-3
1
14
18
10
20
35
53
10
29
24
46
3
mV/°C
mV/°C
Units
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
V
Ω
ns
ns
ns
ns
V
S