FDS8858CZ Fairchild Semiconductor, FDS8858CZ Datasheet - Page 7

• Manufacturer Part Number: FDS8858CZ
• Description: MOSFET DUAL N/P-CHAN 30V SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8858CZ

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 8.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.6A, 7.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1205pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.017 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 27 S / 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 8.6 A @ N Channel or 7.3 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8858CZTR

©2009 Fairchild Semiconductor Corporation
FDS8858CZ Rev.B1
Typical Characteristics (Q2 P-Channel)
20
16
12
8
4
0
0
1.6
1.4
1.2
1.0
0.8
0.6
Figure 17. Normalized On- Resistance
Figure 15. On- Region Characteristics
20
16
12
-75
8
4
0
Figure 19. Transfer Characteristics
0
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
-50
V
V
I
D
-V
GS
DS
vs Junction Temperature
= -7.3A
DS
= -10V
= -5V
-V
, DRAIN TO SOURCE VOLTAGE (V)
T
-25
1
GS
1
J
V
V
, JUNCTION TEMPERATURE (
V
GS
V
, GATE TO SOURCE VOLTAGE (V)
GS
GS
GS
= -10V
= -5V
= -4.5V
= -4V
0
T
J
= 125
T
2
25
J
2
= 25
µ
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
o
s
C
o
50
C
3
75
3
T
V
V
100 125 150
J
o
GS
GS
C )
=-55
= -3.5V
= -3V
4
o
C
µ
s
4
5
T
J
= 25°C unless otherwise noted
7
0.0001
Figure 16. Normalized on-Resistance vs Drain
0.001
0.01
0.1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
30
60
50
40
30
20
10
1
0.0
Figure 18. On-Resistance vs Gate to
0
2
Forward Voltage vs Source Current
Figure 20. Source to Drain Diode
V
V
GS
GS
T
J
-V
= -3.5V
= 0V
Current and Gate Voltage
= 150
0.2
V
SD
-V
GS
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
= -4V
o
, GATE TO SOURCE VOLTAGE (V)
C
4
Source Voltage
I
-I
D
0.4
D
= -7.3A
, DRAIN CURRENT(A)
8
0.6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
T
J
J
= 125
12
= 25
0.8
T
o
o
J
C
C
V
= -55
V
V
GS
GS
GS
8
T
J
= -4.5V
= -5V
= -10V
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16
o
= 25
C
1.0
o
C
µ
µ
s
s
1.2
20
10