FDS8858CZ Fairchild Semiconductor, FDS8858CZ Datasheet - Page 8

• Manufacturer Part Number: FDS8858CZ
• Description: MOSFET DUAL N/P-CHAN 30V SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS8858CZ

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 8.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.6A, 7.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1205pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.017 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 27 S / 21 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V @ N Channel or +/- 25 V @ P Channel
• Continuous Drain Current: 8.6 A @ N Channel or 7.3 A @ P Channel
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8858CZTR

©2009 Fairchild Semiconductor Corporation
FDS8858CZ Rev.B1
Typical Characteristics(Q2 P-Channel)
Figure 25
Figure 21. Gate Charge Characteristics
10
20
10
8
6
4
2
0
8
6
4
2
0
1
0.01
25
Current vs Ambient Temperature
0
Figure 23. Unclamped Inductive
R
I
D
θ
JA
= -7.3A
= 78
. Maximum Continuous Drain
Switching Capability
50
7
o
T
C/W
A
t
AV
, AMBIENT TEMPERATURE (
0.1
, TIME IN AVALANCHE(ms)
- Q
T
J
g
V
, GATE CHARGE(nC)
= 125
GS
V
DD
14
75
= -4.5V
= -15V
o
C
V
DD
T
1
100
V
21
J
= -10V
GS
= 25
V
= -10V
DD
o
C
= -20V
o
C )
125
28
10
150
35
30
T
J
= 25
8
o
C unless otherwise noted
4000
1000
Figure 24. Gate Leakage Current vs Gate to
100
10
10
10
10
10
10
0.01
0.1
-3
-4
-5
-6
-7
-8
10
60
0.1
1
0
0.1
V
Figure 22. Capacitance vs Drain
f = 1MHz
V
DS
THIS AREA IS
GS
LIMITED BY r
Figure 26. Forward Bias Safe
= 0V
= 0V
5
-V
-V
-V
GS
to Source Voltage
DS
DS
,
Source Voltage
Operating Area
, DRAIN TO SOURCE VOLTAGE (V)
GATE TO SOURCE VOLTAGE(V)
, DRAIN to SOURCE VOLTAGE (V)
DS(on)
10
1
1
T
T
J
SINGLE PULSE
T
R
T
J
J
A
= 125
θ
JA
= 25
15
= MAX RATED
= 25
= 135
o
o
o
C
C
C
o
C/W
20
C
C
C
10
iss
oss
rss
www.fairchildsemi.com
10
25
10s
10ms
100ms
1ms
1s
DC
30
30
80