SI5519DU-T1-GE3 Vishay, SI5519DU-T1-GE3 Datasheet

MOSFET N/P-CH 20V PWRPAK CHPFET

SI5519DU-T1-GE3

Manufacturer Part Number
SI5519DU-T1-GE3
Description
MOSFET N/P-CH 20V PWRPAK CHPFET
Manufacturer
Vishay
Datasheet

Specifications of SI5519DU-T1-GE3

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 6.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A, 4.8A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
17.5nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 10V
Power - Max
2.27W
Mounting Type
Surface Mount
Package / Case
PowerPAK® ChipFet Dual
Module Configuration
Dual
Transistor Polarity
N And P Channel
Continuous Drain Current Id
6A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
8V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.036 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
6 A, - 4.8 A
Power Dissipation
2.27 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5519DU-T1-GE3TR
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated)
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
N-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
P-Channel
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequade bottom side solder interconnection.
Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAK ChipFET Dual
8
D
V
1
7
DS
- 20
20
D
(V)
1
6
S
1
0.064 at V
0.095 at V
D
0.036 at V
0.063 at V
5
2
1
Bottom View
G
D
1
R
2
J
N- and P-Channel 20-V (D-S) MOSFET
DS(on)
2
b, f
= 150 °C)
S
GS
GS
2
GS
GS
3
= - 4.5 V
= - 2.5 V
(Ω)
= 4.5 V
= 2.5 V
G
2
4
I
D
- 6.0
- 6.0
6.0
6.0
(A)
d, e
A
a
= 25 °C, unless otherwise noted
Q
Steady State
Marking Code
T
T
T
T
T
5.4 nC
6.0 nC
T
T
T
T
T
g
C
C
C
C
C
EB
A
A
A
A
A
(Typ.)
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
XXX
Part #
Code
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• Halogen-free
• Portable DC-DC Applications
Symbol
Symbol
T
R
R
J
V
V
I
TrenchFET
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
G
1
Typ.
®
9.5
43
N-Channel
N-Channel
N-Channel MOSFET
Power MOSFETs
6.0
2.27
1.45
4.9
1.9
10.4
6.0
6.0
6.0
6.6
20
25
a, b, c
b, c
b, c
b, c
b, c
a
a
a
Max.
D
S
55
12
1
1
- 55 to 150
± 12
260
Typ.
9.5
43
P-Channel
P-Channel
- 4.8
- 3.8
- 1.9
2.27
1.45
- 6.0
- 6.0
- 6.0
10.4
- 20
- 20
Vishay Siliconix
6.6
G
b, c
b, c
b, c
b, c
b, c
a
a
a
2
Max.
55
12
P-Channel MOSFET
Si5519DU
www.vishay.com
S
D
2
2
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI5519DU-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...

Page 2

... Si5519DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... GEN ° 3 2 N-Channel 3.1 A, dI/dt = 100 A/µ P-Channel 2.2 A, dI/ 100 A/µ Si5519DU Vishay Siliconix a Min. Typ. Max. N-Ch 5.5 8.25 P-Ch 4.5 6.8 N- Ω P-Ch 11 16.5 N- P- Ω N- P-Ch 8.5 12.8 N-Ch 8.6 P-Ch - 8.6 N-Ch 25 ...

Page 4

... Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 3 Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 0.08 V 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 6 Total Gate Charge (nC) g Gate Charge www.vishay.com 2 4 3.0 2.5 2.0 1 ...

Page 5

... Limited by R DS(on 0.1 BVDSS Limited 0. °C A Single Pulse 0.001 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si5519DU Vishay Siliconix T = 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 5 0 0.001 0.01 0 Time (s) Single Pulse Power 10 ms 100 ms ...

Page 6

... Si5519DU Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Document Number: 74406 S-81449-Rev. B, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse 0.01 0.001 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5519DU Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA (t) 3 ...

Page 8

... Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0. 0.08 V 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 5 Total Gate Charge (nC) g Gate Charge www.vishay.com thru 2.0 1.5 1 125 ° ...

Page 9

... Limited by R DS(on 0.1 BVDSS Limited 0. °C A Single Pulse 0.001 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si5519DU Vishay Siliconix T = 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0 Time (s) Single Pulse Power ...

Page 10

... Si5519DU Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 9 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Document Number: 74406 S-81449-Rev. B, 23-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Single Pulse 0.001 0.01 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si5519DU Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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