SI5519DU-T1-GE3 Vishay, SI5519DU-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI5519DU-T1-GE3
• Description: MOSFET N/P-CH 20V PWRPAK CHPFET
• Manufacturer: Vishay

Specifications of SI5519DU-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.8A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 10V
• Power - Max: 2.27W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6 A, - 4.8 A
• Power Dissipation: 2.27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5519DU-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
0.001
0.01
1.6
1.4
1.2
1.0
0.8
0.6
100
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
I
Threshold Voltage
0.4
D
T
= 150 °C
J
= 250 µA
25
- Temperature (°C)
0.6
50
75
0.001
0.01
T
0.8
100
0.1
J
10
= 25 °C
1
0.1
100
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
1.0
GS
Single Pulse
125
T
> minimum V
A
= 25 °C
V
DS
150
1.2
- Drain-to-Source Voltage (V)
DS(on)
1
GS
*
BVDSS Limited
at which R
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
is specified
5
0
0.001
1
1 s
10 s
10 ms
100 ms
DC
On-Resistance vs. Gate-to-Source Voltage
0.01
100
V
2
GS
0.1
Single Pulse Power
- Gate-to-Source Voltage (V)
T
A
= 25 °C
Time (s)
3
1
Vishay Siliconix
Si5519DU
10
T
A
www.vishay.com
4
= 125 °C
I
D
100
= 5 A
1000
5
5