SI5519DU-T1-GE3 Vishay, SI5519DU-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI5519DU-T1-GE3
• Description: MOSFET N/P-CH 20V PWRPAK CHPFET
• Manufacturer: Vishay

Specifications of SI5519DU-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.8A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 10V
• Power - Max: 2.27W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6 A, - 4.8 A
• Power Dissipation: 2.27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5519DU-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
0.01
0.01
0.0001
0.1
1
1
10
-4
0.1
0.02
Duty Cycle = 0.5
0.05
Duty Cycle = 0.5
0.2
0.1
0.2
Single Pulse
0.05
10
-3
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.001
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
0.01
1
10
0.1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
Vishay Siliconix
t
2
DM
100
Z
thJA
thJA
Si5519DU
t
t
1
2
(t)
= 87 °C/W
www.vishay.com
1000
1
7