SI5519DU-T1-GE3 Vishay, SI5519DU-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI5519DU-T1-GE3
• Description: MOSFET N/P-CH 20V PWRPAK CHPFET
• Manufacturer: Vishay

Specifications of SI5519DU-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.8A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 17.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 10V
• Power - Max: 2.27W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 6 A, - 4.8 A
• Power Dissipation: 2.27 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5519DU-T1-GE3TR

Si5519DU
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.20
0.16
0.12
0.08
0.04
0.00
10
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
5
0
0
0
0
I
D
= 5.4 A
V
GS
2
1
= 2.5 V
V
5
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
4
D
- Drain Current (A)
Gate Charge
V
2
DS
V
= 10 V
GS
10
6
V
GS
V
= 5 V thru 3 V
GS
= 16 V
3
= 4.5 V
8
15
V
V
V
GS
GS
GS
4
10
= 2.5 V
= 2 V
= 1.5 V
12
20
5
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.5
1.0
0.5
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
4
V
V
0.5
DS
Transfer Characteristics
T
GS
0
J
T
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 25 °C
25
Capacitance
T
8
C
= 125 °C
C
1.0
50
iss
S-81449-Rev. B, 23-Jun-08
Document Number: 74406
V
I
12
D
GS
75
= 4 A
= 4.5 V
C
oss
V
I
100
D
T
1.5
GS
C
= 4 A
= - 55 °C
16
= 2.5 V
125
150
2.0
20