FDMJ1032C Fairchild Semiconductor, FDMJ1032C Datasheet

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FDMJ1032C

Manufacturer Part Number
FDMJ1032C
Description
MOSFET N/P-CH DUAL 20V SC75
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMJ1032C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A, 2.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
270pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMJ1032CTR
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
FDMJ1032C
Dual N & P-Channel PowerTrench
N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ
Features
Q1: N-Channel
Q2: P-Channel
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJA
θJA
Max r
Max r
Max r
Max r
Max r
Low gate charge, high power and current handling
capability
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
DS(on)
032
= 90mΩ at V
= 130mΩ at V
= 160mΩ at V
= 230mΩ at V
= 390mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient, Single Operation
Thermal Resistance, Junction to Ambient, Single Operation
Drain Current
Pin 1
GS
SC-75 MicroFET
G1
GS
GS
GS
GS
= 4.5V, I
D1
= 2.5V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
FDMJ1032C
S1
S1
- Pulsed
- Continuous
Device
S2
D
D2
S2
D
= 3.2A
D
D
D
= 2.5A
= -2.5A
= -2.0A
= -1.0A
G2
T
A
= 25°C unless otherwise noted
Parameter
SC-75 MicroFET
Package
®
1
MOSFET
General Description
This dual N and P-Channel
MOSFET
advanced PowerTrench
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
Battery management
T
T
T
A
A
A
= 25°C
= 25°C
= 25°C
S1
S2
G1
Reel Size
is
4
5
6
7”
Bottom Drain Contact
Bottom Drain Contact
produced
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
®
process that has been especially
using
Tape Width
±12
Q1
3.2
20
12
enhancement
8mm
-55 to +150
Fairchild
3
2
1
182
G2
1.4
0.8
S2
S1
89
September 2007
-2.5
Q2
-20
-12
Semiconductor’s
±8
www.fairchildsemi.com
mode Power
3000 units
Quantity
Units
°C/W
°C
W
V
V
A
tm

Related parts for FDMJ1032C

FDMJ1032C Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient, Single Operation θJA R Thermal Resistance, Junction to Ambient, Single Operation θJA Package Marking and Ordering Information Device Marking Device 032 FDMJ1032C ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev.B ® MOSFET General Description This dual N and P-Channel MOSFET = 3.2A D advanced PowerTrench = 2.5A D tailored to minimize on-state resistance and yet maintain superior switching performance ...

Page 2

... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev 25°C unless otherwise noted J Test Conditions I = 250µ -250µ 250µA, referenced to 25°C ...

Page 3

... Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA by the user's board design. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev 25°C unless otherwise noted J Test Conditions 1.16A 0V ...

Page 4

... Junction Temperature 12 µ PULSE DURATION = 300 s DUTY CYCLE = 0.2%MAX - 0.5 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev 25°C unless otherwise noted 3. 2. µ PULSE DURATION = 300 s DUTY CYCLE = 0.2%MAX 1.5 2.0 2 100 125 150 ...

Page 5

... T , AMBIENT TEMPERATURE A Figure 9. Maximum Continuous Drain Current vs Ambient Temperature 1000 V = 4.5V GS 100 Figure 11. Single Pulse Maximum Power Dissipation ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev 25°C unless otherwise noted J 600 = 5V 100 V = 15V DD 1.5 2.0 2 4. 2.5V GS 0.01 100 125 150 ...

Page 6

... Typical Characteristics (Q1 N-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 0.001 - ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θJA ...

Page 7

... PULSE DURATION = 300 s DUTY CYCLE = 0.2%MAX - - 0.5 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev 25°C unless otherwise noted J µ PULSE DURATION = 300 s DUTY CYCLE = 0.2%MAX V = -2. - -1. Figure 14. Normalized on-Resistance vs Drain 50 75 100 125 150 ...

Page 8

... C/W θ AMBIENT TEMPERATURE A Figure 21. Maximum Continuous Drain Current vs Ambient Temperature 1000 V = -4.5V GS 100 Figure 23. Single Pulse Maximum Power Dissipation ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev 25°C unless otherwise noted -15V -2.5V GS 100 125 150 ( ) PULSE WIDTH (s) 8 600 ...

Page 9

... Typical Characteristics (Q2 P-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 - ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) Figure 24. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θJA ...

Page 10

... Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev.B 10 www.fairchildsemi.com ...

Page 11

... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2007 Fairchild Semiconductor Corporation FDMJ1032C Rev.B ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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