FDMJ1032C Fairchild Semiconductor, FDMJ1032C Datasheet - Page 7

• Manufacturer Part Number: FDMJ1032C
• Description: MOSFET N/P-CH DUAL 20V SC75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMJ1032CTR

©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
Typical Characteristics (Q2 P-Channel)
12
10
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
12
10
8
6
4
2
0
Figure 13. On- Region Characteristics
0.5
8
6
4
2
0
Figure 15. Normalized On-Resistance
0
-75
Figure 17. Transfer Characteristics
PULSE DURATION = 300
DUTY CYCLE = 0.2%MAX
V
DD
V
V
I
D
GS
GS
-50
= -5V
1.0
= -2.5A
vs Junction Temperature
= -4.5V
= -4.5V
-V
1
-V
T
-25
GS
J
DS
,
1.5
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
T
J
0
= -55
2
2.0
o
25
C
µ
s
PULSE DURATION = 300
DUTY CYCLE = 0.2%MAX
2.5
50
3
75
3.0
T
V
J
V
V
o
T
GS
100 125 150
= 25
GS
GS
C )
4
J
= 125
= -2.5V
= -2V
= -1.8V
3.5
o
C
o
C
µ
s
4.0
5
T
J
= 25°C unless otherwise noted
7
Figure 14. Normalized on-Resistance vs Drain
0.001
0.01
0.1
480
400
320
240
160
3.5
3.0
2.5
2.0
1.5
1.0
0.5
50
10
80
1
Figure 16. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
1
Figure 18. Source to Drain Diode
I
D
V
= -1.2A
Current and Gate Voltage
GS
-V
0.2
SD
= 0V
2
-V
T
, BODY DIODE FORWARD VOLTAGE (V)
V
J
GS
GS
= 125
V
Source Voltage
- I
,
2
GS
D
GATE TO SOURCE VOLTAGE
= -1.8V
0.4
V
,
GS
= -2V
DRAIN CURRENT(A)
o
C
4
= -2.5V
T
J
0.6
= 25
6
o
3
PULSE DURATION = 300
DUTY CYCLE = 0.2%MAX
PULSE DURATION = 300
DUTY CYCLE = 0.2%MAX
C
0.8
T
J
T
V
J
= -55
GS
= 125
8
= -4.5V
1.0
T
o
C
J
o
C
4
= 25
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(
V
10
)
o
1.2
C
µ
µ
s
s
1.4
12
5