FDMJ1032C Fairchild Semiconductor, FDMJ1032C Datasheet - Page 2

• Manufacturer Part Number: FDMJ1032C
• Description: MOSFET N/P-CH DUAL 20V SC75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMJ1032CTR

©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
∆T
∆T
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25°C unless otherwise noted
V
V
I
I
V
V
V
V
V
V
V
V
V
I
I
I
I
V
V
V
V
Q1
V
Q2
V
f = 1MHz
Q1
V
V
Q2
V
V
Q1
V
Q2
V
D
D
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
DS
DS
GS
GS
DS
DS
DD
GS
DD
GS
GS
GS
= 250µA, referenced to 25°C
= -250µA, referenced to 25°C
= 250µA, V
= -250µA, V
= 250µA, referenced to 25°C
= -250µA, referenced to 25°C
= -4.5V, I
= 10V, V
= -10V, V
= 16V, V
= -16V, V
= V
= V
= 4.5V, I
= 2.5V, I
= 4.5V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= 5V, I
= -5V, I
= ±12V, V
= ±8V, V
= 10V, I
= 4.5V, R
= -10V, I
= -4.5V, R
= 4.5V, V
= -4.5V, V
DS
DS
Test Conditions
2
, I
, I
D
D
D
D
D
D
D
D
= 3.2A
GS
D
DS
D
D
D
D
= -2.5A
GS
GS
GS
DD
GS
GEN
= 1A,
= 250µA
= -250µA
DD
DS
= 3.2A
= 2.5A
= 3.2A, T
GEN
= -1A,
GS
= -2.5A, T
= -2.5A
= -2.0A
= -1.0A
= 0V, f = 1MHZ
= 0V
= 0V, f = 1MHZ
= 0V
= 0V
= 10V, I
= 0V
= 0V
= -10V, I
= 0V
= 6Ω
= 6Ω
J
D
J
= 125°C
D
= 125°C
= 3.2A
= -2.5A
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Min
-0.4
-20
20
0.6
Typ
-13
-0.8
100
169
289
156
114
200
290
13
1.1
7.5
0.4
0.6
1.0
0.8
70
83
50
55
30
29
13
11
13
18
-3
3
5
1
5
7
8
8
2
2
3
www.fairchildsemi.com
±100
Max
-1.5
130
132
160
230
390
238
270
390
1.5
90
70
75
45
45
14
16
16
23
20
23
32
-1
1
4
3
4
mV/°C
mV/°C
Units
mΩ
mΩ
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
Ω