FDMJ1032C Fairchild Semiconductor, FDMJ1032C Datasheet - Page 3

• Manufacturer Part Number: FDMJ1032C
• Description: MOSFET N/P-CH DUAL 20V SC75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMJ1032CTR

©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
Electrical Characteristics
Drain-Source Diode Characteristics
V
t
Q
rr
by the user's board design.
SD
rr
θJA
Symbol
is determined with the device mounted on a 1in
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 89°C/W when mounted on
a 1 in
2
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
pad of 2 oz copper
= 25°C unless otherwise noted
V
V
Q1
I
Q2
I
F
F
GS
GS
= 3.2A, di/dt = 100A/s
= -2.5A, di/dt = 100A/s
= 0V, I
= 0V, I
Test Conditions
3
S
S
= 1.16A
= -1.2A
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
Type
Q1
Q2
Q1
Q2
Q1
Q2
b. 182°C/W when mounted on a
minimum pad of 2 oz copper
Min
Typ
-0.8
0.8
2.5
12
14
4
θCA
www.fairchildsemi.com
Max
-1.2
1.2
is determined
Units
nC
ns
V