FDMJ1032C Fairchild Semiconductor, FDMJ1032C Datasheet - Page 4

• Manufacturer Part Number: FDMJ1032C
• Description: MOSFET N/P-CH DUAL 20V SC75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMJ1032CTR

©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
Typical Characteristics (Q1 N-Channel)
12
10
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
12
10
Figure 3. Normalized On -Resistance
8
6
4
2
0
0.0
Figure 1.
8
6
4
2
0
0.5
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 300
DUTY CYCLE = 0.2%MAX
V
DS
V
V
I
GS
D
GS
-50
= 5V
1.0
vs Junction Temperature
= 3.2A
= 4.5V
= 4.5V
0.5
V
T
V
GS
On- Region Characteristics
-25
J
DS
,
, GATE TO SOURCE VOLTAGE (V)
1.5
JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
T
J
0
= -55
1.0
V
2.0
GS
o
25
µ
C
= 4.0V
s
PULSE DURATION = 300
DUTY CYCLE = 0.2%MAX
V
2.5
50
GS
1.5
T
J
= 3.5V
= 125
75
3.0
T
o
V
V
C
V
J
GS
GS
GS
= 25
o
2.0
100 125 150
C )
= 3V
= 2.5V
= 2V
o
3.5
C
µ
s
2.5
4.0
T
J
= 25°C unless otherwise noted
4
0.0001
0.001
0.01
280
240
200
160
120
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
20
80
40
10
Figure 4.
Figure 2.
1
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
1
Figure 6.
PULSE DURATION = 300
DUTY CYCLE = 0.2%MAX
I
D
= 1.6A
V
GS
T
V
J
0.2
SD
2
= 0V
= 25
V
GS
Normalized On-Resistance
On-Resistance vs Gate to
, BODY DIODE FORWARD VOLTAGE (V)
T
J
,
Source Voltage
o
I
= 125
2
Source to Drain Diode
D
GATE TO SOURCE VOLTAGE
C
,
DRAIN CURRENT(A)
0.4
4
o
C
V
GS
T
= 2.5V
V
µ
J
GS
0.6
s
PULSE DURATION = 300
DUTY CYCLE = 0.2%MAX
6
= 125
3
= 3V
o
T
C
V
J
GS
= -55
0.8
8
= 3.5V
T
o
J
C
4
V
= 25
(
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V
GS
V
GS
10
)
1.0
o
= 4V
= 4.5V
C
µ
s
12
1.2
5