US6M11TR Rohm Semiconductor, US6M11TR Datasheet
US6M11TR
Specifications of US6M11TR
Related parts for US6M11TR
US6M11TR Summary of contents
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Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Applications ...
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US6M11 <N-ch> Electrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ ...
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US6M11 Electrical characteristic curves <Nch> 1.5 Ta=25° 10V GS Pulsed 1. ...
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US6M11 10 V =0V GS Pulsed 1 Ta=125°C 0.1 Ta=75°C Ta=25°C Ta=-25°C 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25° 10V DD 1 ...
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US6M11 <Pch> 2 Ta=25° -10V GS Pulsed V = -4. -2. -1. -1. -1. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE ...
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US6M11 10 V =0V GS Pulsed 1 Ta=125°C Ta=75°C 0.1 Ta=25°C Ta=-25°C 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25° - ...
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US6M11 Measurement circuit <Nch> D.U. Fig.1-1 Switching Time Measurement Circuit D.U. (Const Fig.2-1 Gate ...
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