US6M11TR Rohm Semiconductor, US6M11TR Datasheet - Page 7

• Manufacturer Part Number: US6M11TR
• Description: MOSFET N/P-CH 20V 1.5A TUMT6
• Manufacturer: Rohm Semiconductor

Specifications of US6M11TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V, 12V
• Current - Continuous Drain (id) @ 25° C: 1.5A, 1.3A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 110pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

<Nch>
Fig.1-1 Switching Time Measurement Circuit
Fig.2-1 Gate Charge Measurement Circuit
<Pch>
Fig.3-1 Switching Time Measurement Circuit
Fig.4-1 Gate Charge Measurement Circuit
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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US6M11
I
c
I
www.rohm.com
G(Const.)
G (Const.)
Measurement circuit
Notice
2009 ROHM Co., Ltd. All rights reserved.
R
R
R
G
G
R
G
G
V
V
V
GS
GS
V
GS
GS
I
D.U.T.
I
D
D.U.T.
D
D.U.T.
D.U.T.
I
D
I
D
R
R
V
V
R
L
L
R
V
DD
DD
V
L
L
DD
DD
V
V
V
DS
DS
V
DS
DS
V
V
V
V
GS
DS
GS
DS
V
V
t
t
d(on)
GS
d(on)
GS
Fig.1-2 Switching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.4-2 Gate Charge Waveform
V
Fig.3-2 Switching Waveforms
V
G
G
7/7
Q
Q
10%
gs
gs
t
50%
10%
on
t
50%
on
10%
90%
Pulse Width
Pulse Width
Q
Q
90%
t
t
r
10%
r
gd
gd
Q
Q
g
g
90%
90%
t
t
d(off)
d(off)
t
Charge
t
Charge
off
off
50%
50%
t
10%
90%
t
90%
r
10%
r
2009.07 - Rev.A
Data Sheet