US6M11TR Rohm Semiconductor, US6M11TR Datasheet - Page 3

• Manufacturer Part Number: US6M11TR
• Description: MOSFET N/P-CH 20V 1.5A TUMT6
• Manufacturer: Rohm Semiconductor

Specifications of US6M11TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V, 12V
• Current - Continuous Drain (id) @ 25° C: 1.5A, 1.3A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 110pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Electrical characteristic curves
2009 ROHM Co., Ltd. All rights reserved.
10000
10000
1000
1000
100
100
10
1.5
0.5
10
1
0
0.01
0.01
0
Ta= 25°C
Pulsed
V
Pulsed
GS
Fig.1 Typical Output Characteristics( Ⅰ )
Fig.4 Static Drain-Source On-State
Fig.7 Static Drain-Source On-State
= 1.8V
DRAIN-SOURCE VOLTAGE : V
0.2
Resistance vs. Drain Current( Ⅰ )
DRAIN-CURRENT : I
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅳ )
0.1
0.1
0.4
V
GS
V
V
V
= 1.8V
GS
GS
GS
= 4.5V
= 2.5V
= 10V
0.6
V
V
V
V
V
1
V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
GS
GS
GS
GS
GS
D
D
V
GS
= 1.5V
= 1.8V
= 2.5V
= 4.5V
[A]
[A]
= 1.3V
GS
= 1.2V
= 1.5V
0.8
Ta=25°C
Pulsed
DS
[V]
10
10
1
10000
10000
1000
1000
100
100
10
1.5
0.5
10
1
0
0.01
0.01
0
V
Pulsed
Fig.2 Typical Output Characteristics( Ⅱ )
V
Pulsed
GS
GS
DRAIN-SOURCE VOLTAGE : V
V
V
= 4.5V
= 1.5V
Fig.5 Static Drain-Source On-State
Fig.8 Static Drain-Source On-State
GS
GS
= 4.5V
= 1.8V
2
Resistance vs. Drain Current( Ⅱ )
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅴ )
V
DRAIN-CURRENT : I
GS
0.1
0.1
= 1.1V
4
V
GS
= 1.5V
V
GS
6
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
= 1.3V
3/7
1
1
D
[A]
D
DS
[A]
Ta=25°C
Pulsed
8
[V]
10
10
10
10000
0.001
1000
0.01
100
0.1
0.1
10
10
10
1
1
0.01
0.01
0
V
Pulsed
V
Pulsed
V
Pulsed
DS
GS
DS
Ta= - 25°C
Ta= 125°C
= 10V
= 2.5V
Ta= 75°C
Ta= 25°C
Fig.3 Typical Transfer Characteristics
= 10V
GATE-SOURCE VOLTAGE : V
Fig.6 Static Drain-Source On-State
Fig.9 Forward Transfer Admittance
0.5
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅲ )
DRAIN-CURRENT : I
vs. Drain Current
0.1
0.1
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1.5
D
D
[A]
[A]
GS
[V]
2009.07 - Rev.A
10
10
2
Data Sheet