US6M11TR Rohm Semiconductor, US6M11TR Datasheet - Page 2

• Manufacturer Part Number: US6M11TR
• Description: MOSFET N/P-CH 20V 1.5A TUMT6
• Manufacturer: Rohm Semiconductor

Specifications of US6M11TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V, 12V
• Current - Continuous Drain (id) @ 25° C: 1.5A, 1.3A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 110pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

<N-ch>
∗Pulsed
<P-ch>
∗Pulsed
○
US6M11
∗Pulsed
∗Pulsed
Forward voltage
Forward voltage
c
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
www.rohm.com
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Parameter
Parameter
V
V
Symbol
Symbol
Symbol
Symbol
R
R
V
V
(BR) DSS
(BR) DSS
t
t
t
t
C
C
I
I
C
V
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
GSS
Y
Q
GSS
Y
Q
DSS
DSS
t
t
t
t
oss
SD
oss
SD
iss
rss
iss
rss
r
gs
gd
r
gs
gd
fs
f
fs
f
g
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
−0.3
Min.
Min.
Min.
Min.
−12
0.3
1.6
1.4
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
Typ.
Typ.
130
170
220
300
110
190
280
400
530
290
1.8
0.3
0.3
2.4
0.6
0.4
18
15
20
28
21
10
30
−
−
−
−
−
−
5
5
3
−
−
−
−
−
−
8
9
Max.
1060
Max.
Max.
Max.
−1.2
−1.0
±10
180
240
310
600
±10
260
390
600
1.2
1.0
−1
−
1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
Unit
Unit
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
S
V
V
S
I
I
V
I
V
V
I
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
V
I
V
V
I
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
S
D
D
D
D
D
D
D
S
D
D
D
D
D
D
D
2/7
GS
DS
DS
DS
DS
GS
DD
GS
DD
GS
DS
DS
DS
DS
GS
DD
GS
DD
= −1.3A, V
L
G
L
= 1.5A, V
L
G
L
= 1mA, V
= 1.5A, V
= 1.5A, V
= 0.8A, V
= 0.3A, V
= 1A
= 1.5A
= −1mA, V
= −1.3A, V
= −0.6A, V
= −0.6A, V
= −0.2A, V
= −0.6A
= −1.3A
=10Ω
= 10Ω
= ±10V, V
= 20V, V
= 10V, I
= 10V, I
= 10V
=0V
= 4.5V
= ±10 V, V
= −12V, V
= −6V, I
= −6V, I
= −6V
= 0V
= −4.5V
10Ω
6.7Ω, R
10Ω
4.6Ω, R
10V, V
−6V, V
10 V
−6 V
Conditions
Conditions
Conditions
Conditions
GS
GS
GS
GS
GS
GS
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 1mA
= 1.5A
G
= −1mA
= −1.3A
GS
GS
G
=0V
=0V
= 4.5V
= 2.5V
= 1.8V
= 1.5V
GS
DS
= 10Ω
DS
= 10Ω
=0V
=0V
=0V
= −4.5V
= −2.5V
= −1.8V
= −1.5V
= 4.5V
= −4.5V
=0V
=0V
=0V
2009.07 - Rev.A
Data Sheet