BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet - Page 10

• Manufacturer Part Number: BSD235C L6327
• Description: MOSFET N/P-CH 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235C L6327

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA, 530mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 47pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235C L6327; BSD235C L6327TR; SP000442466

Rev.2.2
17 Typ. gate threshold voltage (P)
V
19 Typ. capacitances (P)
C =f(V
GS(th)
1.6
1.2
0.8
0.4
10
10
10
=f(T
DS
0
2
1
0
-60
); V
0
j
); V
GS
-20
=0 V; f =1 MHz
GS
=V
5
DS
20
; I
D
=-1.5 µA
2%
V
T
typ
j
DS
60
10
98%
[°C]
Crss
Coss
Ciss
[V]
100
15
140
page 10
180
20
18 Typ. gate threshold voltage (N)
V
20 Typ. capacitances (N)
C =f(V
GS(th)
1.6
1.2
0.8
0.4
10
10
10
=f(T
DS
0
2
1
0
-60
); V
0
j
); V
GS
=0 V; f =1 MHz
GS
-20
=V
5
DS
20
; I
D
=1.6 µA
V
2%
T
98%
typ
DS
j
60
10
[°C]
[V]
100
15
BSD235C
Ciss
140
Coss
Crss
2011-07-14
180
20