BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet - Page 2

• Manufacturer Part Number: BSD235C L6327
• Description: MOSFET N/P-CH 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235C L6327

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA, 530mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 47pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235C L6327; BSD235C L6327TR; SP000442466

Rev.2.2
2)
of the PCB
Parameter
Thermal characteristics
Thermal resistance, junction -
ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state
resistance
Transconductance
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
j
=25 °C, unless otherwise specified
N
N
N
N
N
N
N
N
N
P
P V
P V
P I
P
P
P R
P
P g
Symbol Conditions
R
I
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint
V
V
V
V
V
T
V
T
V
T
V
T
V
V
I
V
V
V
|V
I
|V
I
page 2
D
D
D
j
j
j
j
GS
GS
DS
DS
DS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=25 °C
=150 °C
=150 °C
=-0.17 A
=-0.46 A
=0.76 A
DS
DS
=0 V, I
=0 V, I
=V
=V
=-20 V, V
=20 V, V
=-20 V, V
=20 V, V
=±12 V, V
=-2.5 V,
=2.5 V, I
=-4.5V, I
=4.5 V, I
|>2|I
|>2|I
GS
GS
, I
, I
D
D
|R
|R
D
D
D
D
=-250 µA
=250 µA
=-1.5 µA
=1.6 µA
D
D
GS
GS
D
DS(on)max
DS(on)max
GS
GS
=0.29 A
=0.95 A
=-0.53 A
DS
=0 V,
=0 V,
=0 V,
=0 V,
=0 V
2)
,
,
min.
-1.2
0.7
20
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1221
0.95
typ.
-0.9
415
745
266
0.7
2
-
-
-
-
-
-
-
-
max.
±100
2100
1200
-100
250
-0.6
100
600
350
-20
1.2
-1
1
-
-
-
BSD235C
Unit
K/W
V
µA
nA
mΩ
S
2011-07-14