BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet - Page 6

• Manufacturer Part Number: BSD235C L6327
• Description: MOSFET N/P-CH 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235C L6327

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA, 530mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 47pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235C L6327; BSD235C L6327TR; SP000442466

Rev.2.2
5 Safe operating area (P)
I
parameter: t
7 Max. transient thermal impedance (P)
Z
parameter: D =t
D
thJA
=f(V
=f(t
10
10
10
10
10
10
10
10
DS
-1
-2
1
0
3
2
1
0
10
10
p
); T
)
-1
-5
0.02
0.5
0.2
0.01
0.05
single pulse
0.1
A
p
=25 °C; D =0
10
p
-4
/T
10
-3
10
0
10
-V
-2
t
DS
p
[s]
[V]
10
-1
100 µs
10 ms
1 ms
10
DC
10 µs
1
10
0
1 µs
10
1
10
10
page 6
2
2
6 Safe operating area (N)
I
parameter: t
8 Max. transient thermal impedance (N)
Z
parameter: D =t
D
thJA
=f(V
=f(t
10
10
10
10
10
10
10
10
DS
-1
-2
1
0
3
2
1
0
10
10
p
); T
)
-1
-5
0.01
0.05
0.02
single pulse
0.2
0.1
0.5
A
p
=25 °C; D =0
10
p
-4
/T
10
-3
10
0
10
V
-2
t
DS
p
[s]
[V]
10
-1
100 µs
DC
10 ms
1 ms
10
10 µs
1
10
0
1 µs
BSD235C
10
1
2011-07-14
10
10
2
2