BSD235C L6327 Infineon Technologies, BSD235C L6327 Datasheet - Page 8

• Manufacturer Part Number: BSD235C L6327
• Description: MOSFET N/P-CH 20V SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSD235C L6327

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 950mA, 530mA
• Vgs(th) (max) @ Id: 1.2V @ 1.6µA
• Gate Charge (qg) @ Vgs: 0.34nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 47pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSD235C L6327; BSD235C L6327TR; SP000442466

Rev.2.2
13 Typ. transfer characteristics (P)
I
parameter: T
15 Drain-source on-state resistance (P)
R
D
=f(V
DS(on)
1800
1600
1400
1200
1000
0.75
0.25
800
600
400
200
0.5
1
0
GS
=f(T
0
-60
0
); |V
j
); I
DS
j
D
-20
|>2 | I
=-0.53 A; V
D
20
| R
1
98%
DS(on)max
-V
T
GS
typ
GS
j
60
=-4.5 V
[°C]
150 °C
[V]
100
2
140
25 °C
180
page 8
3
14 Typ. transfer characteristics (N)
I
parameter: T
16 Drain-source on-state resistance (N)
R
D
=f(V
DS(on)
0.75
0.25
600
500
400
300
200
100
0.5
1
0
GS
=f(T
0
-60
0
); |V
j
); I
DS
j
D
-20
=0.95 A; V
|>2 | I
20
D
1
| R
98%
V
150 °C
GS
DS(on)max
T
GS
=4.5 V
j
60
[°C]
typ
[V]
100
2
25 °C
BSD235C
140
2011-07-14
180
3