UPA2590T1H-T1-AT Renesas Electronics America, UPA2590T1H-T1-AT Datasheet - Page 10

• Manufacturer Part Number: UPA2590T1H-T1-AT
• Description: MOSFET N/P-CH 30V 8VSOF
• Manufacturer: Renesas Electronics America

Specifications of UPA2590T1H-T1-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.24W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(2) P-channel MOSFET
8
-0.01
-100
-0.1
120
100
-10
80
60
40
20
-1
0
-0.1
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Single Pulse
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
P
D
I
(FET1) : P
D(DC)
25
V
T
DS
A
1000
- Ambient Temperature - °C
- Drain to Source Voltage - V
100
50
D
10
(FET2) = 1 : 1
1
-1
1 m
I
D(pulse)
75
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
-10
125
150
1 ms
10 ms
100 ms
5 s
Single Pulse
Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
Data Sheet G19217EJ1V0DS
100 m
175
-100
PW - Pulse Width - s
1
1.5
0.5
P
P
D
D
2
1
0
(FET1) : P
(FET1) : P
0
10
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
2 units, 5 s
A
D
D
- Ambient Temperature - °C
(FET2) = 1 : 1
(FET2) = 0 : 1
50
Mounted on FR-4 board of
25.4 mm x 25.4 mm x 0.8 mmt
100
1 unit, 5 s
75
100
1000
125
150
μ
PA2590
175