UPA2590T1H-T1-AT Renesas Electronics America, UPA2590T1H-T1-AT Datasheet - Page 9
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UPA2590T1H-T1-AT
Manufacturer Part Number
UPA2590T1H-T1-AT
Description
MOSFET N/P-CH 30V 8VSOF
Manufacturer
Renesas Electronics America
Datasheet
1.UPA2590T1H-T2-AT.pdf
(13 pages)
Specifications of UPA2590T1H-T1-AT
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
6.6nC @ 10V
Input Capacitance (ciss) @ Vds
310pF @ 10V
Power - Max
1.24W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
0.0001
0.001
0.01
120
100
100
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.1
80
60
40
20
10
10
0
1
1
-50 -25
0.1
0
V
SWITCHING CHARACTERISTICS
F(S-D)
T
ch
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
0
- Channel Temperature - °C
- Source to Drain Voltage - V
I
D
0.5
25
1
- Drain Current - A
50
V
GS
t
t
d(off)
= 4.5 V
75 100 125 150 175
d(on)
10 V
10
1
t
t
r
f
V
V
R
V
Pulsed
DD
GS
G
GS
I
Pulsed
D
= 6 Ω
= 15 V
= 10 V
= 2 A
= 0 V
Data Sheet G19217EJ1V0DS
100
1.5
1000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
25
20
15
10
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
0
0.01
0
V
f = 1.0 MHz
GS
V
= 0 V
1
DS
0.1
- Drain to Source Voltage - V
Q
V
2
G
DD
- Gate Charge - nC
V
= 24 V
DS
15 V
3
6 V
1
V
GS
4
5
10
I
D
= 4.5 A
μ
C
C
C
6
PA2590
iss
oss
rss
100
7
10
8
6
4
2
0
7