UPA2590T1H-T1-AT Renesas Electronics America, UPA2590T1H-T1-AT Datasheet - Page 11

• Manufacturer Part Number: UPA2590T1H-T1-AT
• Description: MOSFET N/P-CH 30V 8VSOF
• Manufacturer: Renesas Electronics America

Specifications of UPA2590T1H-T1-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 6.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 10V
• Power - Max: 1.24W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

-2.5
-1.5
-0.5
200
180
160
140
120
100
-18
-16
-14
-12
-10
80
60
40
20
-8
-6
-4
-2
-3
-2
-1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
0
0
-0.1
-50 -25
0
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
V
GS
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
-0.4
DS
= −4.5 V
ch
0
- Drain to Source Voltage - V
- Channel Temperature - ° C
−10 V
−10 V
I
D
25
-1
- Drain Current - A
-0.8
50
V
75 100 125 150 175
-1.2
GS
= −4.5 V
-10
V
I
D
DS
-1.6
= −1 mA
= −10 V
Pulsed
Data Sheet G19217EJ1V0DS
-100
-2
-0.0001
-0.001
-0.01
-100
-0.1
200
180
160
140
120
100
-10
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
60
40
20
10
-1
0
1
-0.01
FORWARD TRANSFER CHARACTERISTICS
0
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
T
A
= −25°C
V
V
125°C
150°C
25°C
75°C
GS
GS
0°C
-1
-4
- Gate to Source Voltage - V
- Gate to Source Voltage - V
T
I
A
D
-0.1
= −25°C
- Drain Current - A
25°C
0°C
125°C
150°C
-8
-2
75°C
-1
V
Pulsed
V
Pulsed
-12
DS
-3
DS
μ
I
Pulsed
= −10 V
D
= −10 V
= −2 A
PA2590
-10
-16
-4
9