PBSS3515E NXP Semiconductors, PBSS3515E Datasheet - Page 2

• Manufacturer Part Number: PBSS3515E
• Description: TRANSISTOR,PNP,15V,0.5A,SOT416
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515E

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -15V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: SOT-416
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS3515E_2
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Pin
1
2
3
Type number
PBSS3515E
Type number
PBSS3515E
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
BM
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
Description
base
emitter
collector
Package
Name
SC-75
Rev. 02 — 27 April 2009
Description
plastic surface-mounted package; 3 leads
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
p
p
amb
1 ms
1 ms
15 V, 0.5 A PNP low V
Marking code
1R
25 C
Simplified outline
1
[1]
[2]
3
Min
-
-
-
-
-
-
-
-
-
2
65
65
PBSS3515E
CEsat
Graphic symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
150
250
150
+150
+150
15
15
6
0.5
1
100
1
sym013
Version
SOT416
Unit
V
V
V
A
A
mA
mW
mW
3
2
C
C
C
2
.
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