PBSS3515E NXP Semiconductors, PBSS3515E Datasheet - Page 5

• Manufacturer Part Number: PBSS3515E
• Description: TRANSISTOR,PNP,15V,0.5A,SOT416
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515E

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -15V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: SOT-416
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Characteristics
PBSS3515E_2
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
p
300 s;
Rev. 02 — 27 April 2009
0.02.
Conditions
V
V
T
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
I
V
I
f = 100 MHz
V
f = 1 MHz
C
B
C
B
C
B
C
B
C
B
C
Bon
Boff
C
j
CB
CB
EB
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 mA
= 10 mA
= 50 mA
= 50 mA
= 50 mA
= 10 mA;
= 200 mA;
= 500 mA;
= 500 mA;
= 500 mA;
= 250 mA;
= 100 mA;
= 12.5 mA;
= 12.5 mA
= 5 V; I
= 15 V; I
= 15 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 11 V;
= 5 V;
= 10 V; I
15 V, 0.5 A PNP low V
C
C
C
C
C
E
E
E
= 0 A
= 10 mA
= 100 mA
= 500 mA
= 100 mA
= i
= 0 A
= 0 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
150
90
-
-
-
-
-
-
-
-
-
-
-
-
100
-
PBSS3515E
CEsat
Typ
-
-
-
-
-
-
-
-
-
300
-
-
10
22
32
125
37
162
280
-
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
-
-
-
500
-
-
-
-
-
-
-
10
100
50
100
25
150
250
1.1
0.9
Unit
nA
nA
mV
mV
mV
m
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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A