PBSS3515E NXP Semiconductors, PBSS3515E Datasheet - Page 4

• Manufacturer Part Number: PBSS3515E
• Description: TRANSISTOR,PNP,15V,0.5A,SOT416
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515E

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -15V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: SOT-416
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS3515E_2
Product data sheet
Fig 2.
Fig 3.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
duty cycle =
duty cycle =
5
5
1
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
1
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
0.75
0.75
10
10
4
4
10
10
3
3
10
10
2
2
2
Rev. 02 — 27 April 2009
10
10
1
1
15 V, 0.5 A PNP low V
1
1
10
10
PBSS3515E
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aab473
006aaa413
(s)
(s)
10
10
3
3
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