PBSS3515E NXP Semiconductors, PBSS3515E Datasheet - Page 6

• Manufacturer Part Number: PBSS3515E
• Description: TRANSISTOR,PNP,15V,0.5A,SOT416
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515E

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -15V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: SOT-416
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
PBSS3515E_2
Product data sheet
Fig 4.
Fig 6.
(mV)
V
h
1100
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
600
400
200
900
700
500
300
100
0
10
10
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 2 V
= 2 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
I
I
006aaa372
006aaa373
C
C
(mA)
(mA)
10
10
Rev. 02 — 27 April 2009
3
3
Fig 5.
Fig 7.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
1.2
0.8
0.4
1.3
0.9
0.5
0.1
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
15 V, 0.5 A PNP low V
C
amb
amb
amb
amb
/I
1
B
= 20
= 25 C
= 55 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
2
10
PBSS3515E
3
CEsat
I
B
10
= 10 mA
© NXP B.V. 2009. All rights reserved.
2
(BISS) transistor
4
I
006aaa378
006aaa376
C
V
CE
(mA)
(V)
9
8
7
6
5
4
3
2
1
10
5
3
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