NMSD200B01-7 Diodes Inc, NMSD200B01-7 Datasheet
NMSD200B01-7
Specifications of NMSD200B01-7
NMSD200B01TR
NMSD200B01TR
Related parts for NMSD200B01-7
NMSD200B01-7 Summary of contents
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... SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE General Description • NMSD200B01 is best suited for switching voltage regulator and power management applications. It improves efficiency and reliability of DC-DC controllers used in Voltage Regulator Modules (VRM) and can support continuous maximum current of 200mA. It features an ESD protected discrete N-MOSFET with low on-resistance and a discrete Schottky diode with low forward drop ...
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... 0V 300 mA ⎯ ⎯ 300 mA ⎯ ⎯ 800 25°C unless otherwise specified A Unit Test Condition 10μ =20mA =200mA F μ 30V 0V 1.0 MHz 200 mA 0.1xI © Diodes Incorporated Unit Unit 0.25mA D = 1mA D = DS(ON) I =200mA D = 100 Ω NMSD200B01 ...
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... Fig. 6 Gate Threshold Voltage vs. Junction Temperature DS30911 Rev 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.1 100 125 150 0.001 Fig. 7 Static Drain-Source On-Resistance vs. Drain Current www.diodes.com GATE-SOURCE VOLTAGE GS Fig. 5 Transfer Characteristics 0.01 0.1 I DRAIN CURRENT ( © Diodes Incorporated 6 1 NMSD200B01 ...
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... I DRAIN CURRENT ( Fig. 8 Static Drain-Source On-Resistance vs. Drain Current JUNCTION TEMPERATURE ( C) j Fig. 10 Static Drain-Source On-State Resistance vs. Junction Temperature DS30911 Rev Fig. 9 Static Drain-Source On-Resistance vs. Gate-Source Voltage ° www.diodes.com GATE SOURCE VOLTAGE (V) GS, NMSD200B01 © Diodes Incorporated ...
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... V , INSTANTANEOUS FORWARD VOLTAGE (mV) F Fig. 14 Forward Characteristics REVERSE VOLTAGE (V) R Fig. 16 Total Capacitance vs. Reverse Voltage DS30911 Rev 1000 100 ° ° ° ° -40 C 0.1 A 0.01 800 600 1000 www.diodes.com INSTANTANEOUS REVERSE VOLTAGE (V) R Fig. 15 Reverse Characteristics NMSD200B01 © Diodes Incorporated 40 ...
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... Application Details ESD Protected N-MOSFET (DMN601K) and Schottky Barrier Diode (SD103AWS) integrated as one in NMSD200B01 can be used as a discrete entity for general applications or part of circuits to function as a low side switch in a Synchronous Rectifier. The N-MOSFET is selected based on the input voltage range as the maximum duty cycles can be greater than 45% ...
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... Hysteresis) Ordering Information (Note 5) Device NMSD200B01-7 Notes: 5. For Packaging Details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key 2006 Year T Code Month Jan Feb Code 1 2 DS30911 Rev Fig. 19 Low Side DC Load Control Packaging Marking Code SOT-363 SR1 ...
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... J K 0.90 L 0.25 M 0.10 M α 0° All Dimensions in mm Figure 22 Dimensions *Typical dimensions in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65 NMSD200B01 © Diodes Incorporated ...