NMSD200B01-7 Diodes Inc, NMSD200B01-7 Datasheet - Page 3

• Manufacturer Part Number: NMSD200B01-7
• Description: MOSFET N-CH 60V 200MA SOT363
• Manufacturer: Diodes Inc

Specifications of NMSD200B01-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 3 Ohm @ 50mA, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: NMSD200B01DITR; NMSD200B01TR; NMSD200B01TR

Typical Characteristics
Typical N-Channel MOSFET-Q1 (ESD Protected) Characteristics
DS30911 Rev. 7 - 2
1.5
0.5
Fig. 6 Gate Threshold Voltage vs. Junction Temperature
1.4
1.0
0.2
1.2
0.8
0.6
0.4
2
0
1
-50 -25
0
Fig. 3, Max Power Dissipation vs. Ambient Temperature
0
T , JUNCTION TEMPERATURE (°C)
V , DRAIN-SOURCE VOLTAGE (V)
ch
DS
T , AMBIENT TEMPERATURE (°C)
1
A
Fig. 4 Output Characteristics
0
25
2
50
75
3
100
4
125
150
5
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Fig. 7 Static Drain-Source On-Resistance vs. Drain Current
0.1
0.4
10
0.8
0.7
0.6
0.5
0.3
0.2
0.1
1
0.001
0
0
1
V , GATE-SOURCE VOLTAGE
Fig. 5 Transfer Characteristics
I DRAIN CURRENT (A)
GS
D
,
0.01
2
3
0.1
4
5
© Diodes Incorporated
NMSD200B01
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