NMSD200B01-7 Diodes Inc, NMSD200B01-7 Datasheet - Page 5

• Manufacturer Part Number: NMSD200B01-7
• Description: MOSFET N-CH 60V 200MA SOT363
• Manufacturer: Diodes Inc

Specifications of NMSD200B01-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 3 Ohm @ 50mA, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: NMSD200B01DITR; NMSD200B01TR; NMSD200B01TR

Schottky Barrier Diode – D1 Characteristics
DS30911 Rev. 7 - 2
0.0001
0.001
0.01
15
0.1
30
25
20
10
5
0
1
0
0
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 16 Total Capacitance vs. Reverse Voltage
F
T = 125 C
A
200
V , REVERSE VOLTAGE (V)
Fig. 14 Forward Characteristics
10
R
°
400
20
600
T = 75 C
T = 25 C
A
T = 0 C
A
T = -40 C
A
A
°
°
°
30
°
800
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1000
5 of 8
1000
0.01
100
0.1
10
1
0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
5
Fig. 15 Reverse Characteristics
10
15
20
25
30
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