NMSD200B01-7 Diodes Inc, NMSD200B01-7 Datasheet - Page 5

MOSFET N-CH 60V 200MA SOT363

NMSD200B01-7

Manufacturer Part Number
NMSD200B01-7
Description
MOSFET N-CH 60V 200MA SOT363
Manufacturer
Diodes Inc
Datasheet

Specifications of NMSD200B01-7

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
3 Ohm @ 50mA, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
NMSD200B01DITR
NMSD200B01TR
NMSD200B01TR
Schottky Barrier Diode – D1 Characteristics
DS30911 Rev. 7 - 2
0.0001
0.001
0.01
15
0.1
30
25
20
10
5
0
1
0
0
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 16 Total Capacitance vs. Reverse Voltage
F
T = 125 C
A
200
V , REVERSE VOLTAGE (V)
Fig. 14 Forward Characteristics
10
R
°
400
20
600
T = 75 C
T = 25 C
A
T = 0 C
A
T = -40 C
A
A
°
°
°
30
°
800
40
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1000
5 of 8
1000
0.01
100
0.1
10
1
0
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
5
Fig. 15 Reverse Characteristics
10
15
20
25
30
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NMSD200B01
40

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