NMSD200B01-7 Diodes Inc, NMSD200B01-7 Datasheet - Page 4

• Manufacturer Part Number: NMSD200B01-7
• Description: MOSFET N-CH 60V 200MA SOT363
• Manufacturer: Diodes Inc

Specifications of NMSD200B01-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 3 Ohm @ 50mA, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: NMSD200B01DITR; NMSD200B01TR; NMSD200B01TR

10
1
0
0.1
I DRAIN CURRENT (A)
D ,
V
GATE SOURCE VOLTAGE (V)
GS,
Fig. 9 Static Drain-Source On-Resistance vs. Gate-Source Voltage
Fig. 8 Static Drain-Source On-Resistance vs. Drain Current
0
°
T , JUNCTION TEMPERATURE ( C)
j
Fig. 10
Static Drain-Source On-State Resistance
vs. Junction Temperature
1
DS30911 Rev. 7 - 2
4 of 8
NMSD200B01
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