FDD3672 Fairchild Semiconductor, FDD3672 Datasheet - Page 2

• Manufacturer Part Number: FDD3672
• Description: MOSFET N-CH 100V 44A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r
• Type: Power MOSFETr

Specifications of FDD3672

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.028Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 6.5A
• Power Dissipation: 135W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3672; FDD3672TR

©2010 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
V
Q
B
I
I
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDD3672
J
= 25°C, L = 0.6mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 20A.
Parameter
FDD3672
Device
T
C
= 25°C unless otherwise noted
(V
GS
TO-252AA
Package
= 10V)
I
V
V
V
V
I
I
I
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
DS
GS
GS
GS
DS
GS
GS
DD
GS
=44A, V
= 44A, V
= 250µA, V
= 21A, V
= 44A
= 21A
= 44A, dI
= 44A, dI
= 0V
= ±20V
= 0V to 10V
= 0V to 2V
= 80V
= V
= 25V, V
= 50V, I
= 10V, R
Test Conditions
DS
GS
, I
GS
GS
D
D
=10V, T
SD
SD
GS
GS
GS
= 10V
= 44A
= 6V,
= 250µA
Reel Size
/dt =100A/µs
/dt =100A/µs
330mm
= 0V,
= 0V
= 11.0Ω
T
V
I
I
D
g
C
DD
= 1.0mA
C
= 44A
= 150
=175
= 50V
o
o
C
C
Tape Width
Min
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16mm
0.024
0.031
0.054
1710
247
Typ
8.6
5.6
5.6
62
24
11
59
26
44
3
-
-
-
-
-
-
-
-
-
-
-
0.028
0.047
0.068
±100
Max
1.25
250
104
104
4.5
1.0
36
52
80
2500 units
1
4
-
-
-
-
-
-
-
-
-
-
-
Quantity
FDD3672 Rev. A2
Units
µA
nA
pF
pF
pF
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
V
V