FDD3672 Fairchild Semiconductor, FDD3672 Datasheet - Page 2
![MOSFET N-CH 100V 44A D-PAK](/photos/5/38/53880/261-dpak_sml.jpg)
FDD3672
Manufacturer Part Number
FDD3672
Description
MOSFET N-CH 100V 44A D-PAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Type
Power MOSFETr
Datasheet
1.FDD3672.pdf
(11 pages)
Specifications of FDD3672
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 44A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
135W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.028Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
6.5A
Power Dissipation
135W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-252
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.5 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD3672
FDD3672TR
FDD3672TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD3672
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD3672
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
V
Q
B
I
I
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
DSS
GSS
DS(ON)
ON
d(ON)
r
d(OFF)
f
OFF
rr
GS(TH)
VDSS
ISS
OSS
RSS
SD
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
Device Marking
FDD3672
J
= 25°C, L = 0.6mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= 20A.
Parameter
FDD3672
Device
T
C
= 25°C unless otherwise noted
(V
GS
TO-252AA
Package
= 10V)
I
V
V
V
V
I
I
I
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
DS
GS
GS
GS
DS
GS
GS
DD
GS
=44A, V
= 44A, V
= 250µA, V
= 21A, V
= 44A
= 21A
= 44A, dI
= 44A, dI
= 0V
= ±20V
= 0V to 10V
= 0V to 2V
= 80V
= V
= 25V, V
= 50V, I
= 10V, R
Test Conditions
DS
GS
, I
GS
GS
D
D
=10V, T
SD
SD
GS
GS
GS
= 10V
= 44A
= 6V,
= 250µA
Reel Size
/dt =100A/µs
/dt =100A/µs
330mm
= 0V,
= 0V
= 11.0Ω
T
V
I
I
D
g
C
DD
= 1.0mA
C
= 44A
= 150
=175
= 50V
o
o
C
C
Tape Width
Min
100
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16mm
0.024
0.031
0.054
1710
247
Typ
8.6
5.6
5.6
62
24
11
59
26
44
3
-
-
-
-
-
-
-
-
-
-
-
0.028
0.047
0.068
±100
Max
1.25
250
104
104
4.5
1.0
36
52
80
2500 units
1
4
-
-
-
-
-
-
-
-
-
-
-
Quantity
FDD3672 Rev. A2
Units
µA
nA
pF
pF
pF
nC
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
V
V
Ω
V
V