FDD3672 Fairchild Semiconductor, FDD3672 Datasheet - Page 3
![MOSFET N-CH 100V 44A D-PAK](/photos/5/38/53880/261-dpak_sml.jpg)
FDD3672
Manufacturer Part Number
FDD3672
Description
MOSFET N-CH 100V 44A D-PAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Type
Power MOSFETr
Datasheet
1.FDD3672.pdf
(11 pages)
Specifications of FDD3672
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 44A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1710pF @ 25V
Power - Max
135W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.028Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
6.5A
Power Dissipation
135W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-252
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.5 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD3672
FDD3672TR
FDD3672TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD3672
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD3672
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 1. Normalized Power Dissipation vs
1.2
1.0
0.8
0.6
0.4
0.2
0
500
100
30
0
0.01
0.1
10
2
1
-5
V
10
GS
25
-5
= 10V
Ambient Temperature
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
T
50
C
, CASE TEMPERATURE (
Figure 3. Normalized Maximum Transient Thermal Impedance
SINGLE PULSE
10
75
-4
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-4
100
T
C
Figure 4. Peak Current Capability
= 25°C unless otherwise noted
125
o
C)
10
10
-3
t, RECTANGULAR PULSE DURATION (s)
-3
150
t , PULSE WIDTH (s)
175
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
50
40
30
20
10
0
25
50
10
10
Case Temperature
-1
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
T
C
75
, CASE TEMPERATURE (
J
= P
100
T
DM
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
I = I
= 25
x Z
P
25
DM
10
θJC
10
o
C
0
1
0
/t
125
x R
2
o
C DERATE PEAK
t
175 - T
θJC
1
150
o
t
2
C)
+ T
C
C
150
V
GS
FDD3672 Rev. A2
= 10V
10
10
1
1
175