FDD3672 Fairchild Semiconductor, FDD3672 Datasheet - Page 4

• Manufacturer Part Number: FDD3672
• Description: MOSFET N-CH 100V 44A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r
• Type: Power MOSFETr

Specifications of FDD3672

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1710pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.028Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 6.5A
• Power Dissipation: 135W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3672; FDD3672TR

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
300
100
10
80
60
40
20
1
Figure 5. Unclamped Inductive Switching
0
Figure 9. Normalized Drain to Source On
0.001
2.5
2.0
1.5
1.0
0.5
0
Resistance vs Junction Temperature
Figure 7. Saturation Characteristics
-80
If R = 0
t
If R ≠ 0
t
AV
AV
T
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
= 25
STARTING T
0.5
-40
o
AS
C
V
)/(1.3*RATED BV
0.01
DS
T
AS
J
, DRAIN TO SOURCE VOLTAGE (V)
t
, JUNCTION TEMPERATURE (
AV
*R)/(1.3*RATED BV
J
0
, TIME IN AVALANCHE (ms)
1.0
= 150
Capability
V
GS
o
= 10V
C
40
DSS
0.1
1.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
- V
STARTING T
80
V
DD
DSS
GS
T
)
C
2.0
= 5V
V
- V
GS
= 25°C unless otherwise noted
120
DD
= 10V, I
) +1]
1
J
o
C)
= 25
V
2.5
V
GS
160
o
D
GS
C
= 44A
= 6V
= 7V
200
3.0
10
Figure 8. Drain to Source On Resistance vs Drain
Figure 10. Normalized Gate Threshold Voltage vs
80
60
40
20
40
35
30
25
20
15
0
1.2
1.0
0.8
0.6
0.4
3.5
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
-80
Figure 6. Transfer Characteristics
DD
= 15V
4.0
-40
T
Junction Temperature
10
J
V
= 25
GS
T
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
o
C
4.5
0
I
D
V
V
Current
, DRAIN CURRENT (A)
GS
GS
20
= 10V
= 6V
40
5.0
T
J
= 175
80
30
V
GS
5.5
o
= V
C
T
120
J
DS
= -55
, I
o
D
C)
40
= 250µA
o
6.0
C
160
FDD3672 Rev. A2
200
6.5
50