PSMN2R6-40YS,115 NXP Semiconductors, PSMN2R6-40YS,115 Datasheet - Page 11

• Manufacturer Part Number: PSMN2R6-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3776pF @ 12V
• Power - Max: 131W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 131 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4906-2; 934063932115

NXP Semiconductors
8. Revision history
Table 7.
PSMN2R6-40YS_1
Product data sheet
Document ID
PSMN2R6-40YS_1
Revision history
Release date
20090623
Data sheet status
Product data sheet
Rev. 01 — 23 June 2009
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
Change notice
-
PSMN2R6-40YS
Supersedes
-
© NXP B.V. 2009. All rights reserved.
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