PSMN2R6-40YS,115 NXP Semiconductors, PSMN2R6-40YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R6-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3776pF @ 12V
• Power - Max: 131W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 131 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4906-2; 934063932115

NXP Semiconductors
PSMN2R6-40YS_1
Product data sheet
Fig 7.
Fig 9.
(A)
I
(S)
g
D
100
100
fs
80
60
40
20
80
60
40
20
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
20
T
j
2
= 175°C
40
T
j
= 150°C
60
4
80
T
003aad192
003aad197
j
V
= 25 °C
GS
I
D
(A)
(V)
100
6
Rev. 01 — 23 June 2009
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
Fig 8.
Fig 10. Sub-threshold drain current as a function of
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
12
−1
−2
−3
−4
−5
−6
9
6
3
0
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
0
5
2
PSMN2R6-40YS
min
10
typ
4
15
max
V
© NXP B.V. 2009. All rights reserved.
GS
003aad198
V
GS
(V)
03aa35
(V)
20
6
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