PSMN2R6-40YS,115 NXP Semiconductors, PSMN2R6-40YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN2R6-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3776pF @ 12V
• Power - Max: 131W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 131 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4906-2; 934063932115

NXP Semiconductors
PSMN2R6-40YS_1
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
20
32V
8V
40
(A)
I
S
100
80
60
40
20
V
60
0
DS
0
= 20V
Q
003aad194
G
(nC)
T
j
= 175 °C
80
Rev. 01 — 23 June 2009
0.3
T
j
= 150 °C
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
0.9
4
3
2
T
10
as a function of drain-source voltage; typical
values
j
= 25 °C
-1
V
003aad193
SD
(V)
1.2
1
PSMN2R6-40YS
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aad195
(V)
C
C
C
oss
iss
rss
10
2
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