PSMN2R6-40YS,115 NXP Semiconductors, PSMN2R6-40YS,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN2R6-40YS,115
• Description: MOSFET N-CH 40V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-40YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3776pF @ 12V
• Power - Max: 131W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 131 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4906-2; 934063932115

NXP Semiconductors
PSMN2R6-40YS_1
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
(V)
DSon
5
4
3
2
1
0
8
6
4
2
0
−60
junction temperature
of drain current; typical values
0
30
0
V
60
GS
(V) = 5.5
60
max
min
typ
90
120
120
003aad191
003aad280
T
j
I
D
(°C)
(A)
10
20
6
8
150
180
Rev. 01 — 23 June 2009
N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
PSMN2R6-40YS
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2009. All rights reserved.
003aaa508
T
j
( ° C)
03aa27
180
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