PSMN013-80YS,115 NXP Semiconductors, PSMN013-80YS,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN013-80YS,115
• Description: MOSFET N-CH 80V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-80YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 2420pF @ 40V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19.8 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 60 A
• Power Dissipation: 106 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4911-2; 934063934115

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN013-80YS_1
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN013-80YS
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Symbol
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Package
Name
LFPAK
Description
source
source
source
gate
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Conditions
T
T
V
V
t
T
T
t
V
R
p
p
j
j
mb
mb
GS
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω; unclamped
j
j
Rev. 01 — 25 June 2009
≤ 150 °C
≤ 150 °C; R
mb
mb
j(init)
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
mb
mb
= 25 °C; see
= 25 °C
Simplified outline
GS
D
= 20 kΩ
= 55 A; V
Figure 1
Figure 1
(LFPAK)
SOT669
1 2 3 4
Figure 3
mb
sup
≤ 80 V;
PSMN013-80YS
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
80
80
20
42
60
233
106
175
175
260
60
233
70
SOT669
D
Version
S
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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