PSMN013-80YS,115 NXP Semiconductors, PSMN013-80YS,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN013-80YS,115
• Description: MOSFET N-CH 80V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-80YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 2420pF @ 40V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19.8 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 60 A
• Power Dissipation: 106 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4911-2; 934063934115

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN013-80YS_1
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
0.2
0.05
0.02
0.1
single shot
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
10
-5
Conditions
see
Figure 4
10
-4
Rev. 01 — 25 June 2009
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
10
-3
10
-2
PSMN013-80YS
Min
-
10
P
-1
Typ
0.54
t
p
T
t
p
© NXP B.V. 2009. All rights reserved.
(s)
003aac657
δ =
Max
1.4
T
t
p
t
1
Unit
K/W
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