PSMN013-80YS,115 NXP Semiconductors, PSMN013-80YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN013-80YS,115
• Description: MOSFET N-CH 80V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-80YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 2420pF @ 40V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19.8 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 60 A
• Power Dissipation: 106 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4911-2; 934063934115

NXP Semiconductors
PSMN013-80YS_1
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
100
80
60
40
20
0
0
T
j
Rev. 01 — 25 June 2009
0.3
T
= 175 °C
j
= 150 °C
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
0.6
T
0.9
j
= 25 °C
V
003aad184
SD
(V)
1.2
PSMN013-80YS
© NXP B.V. 2009. All rights reserved.
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