PSMN013-80YS,115 NXP Semiconductors, PSMN013-80YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN013-80YS,115
• Description: MOSFET N-CH 80V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-80YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 2420pF @ 40V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19.8 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 60 A
• Power Dissipation: 106 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4911-2; 934063934115

NXP Semiconductors
PSMN013-80YS_1
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(S)
g
fs
80
60
40
20
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
20
0
40
60
max
min
typ
60
120
003aad188
003aad280
T
I
D
j
(°C)
(A)
80
180
Rev. 01 — 25 June 2009
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
2.5
2.0
1.5
1.0
0.5
0.0
a
−1
−2
−3
−4
−5
−6
-60
gate-source voltage
factor as a function of junction temperature
0
-30
0
2
PSMN013-80YS
30
min
60
typ
90
4
120
max
V
© NXP B.V. 2009. All rights reserved.
GS
003aad045
150
(V)
T
03aa35
j
(°C)
180
6
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